Package structure for a semiconductor device

Electricity: electrical systems and devices – Housing or mounting assemblies with diverse electrical... – For electronic systems and devices

Reexamination Certificate

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Details

C361S719000, C361S760000, C257S707000, C165S080300, C174S016300

Reexamination Certificate

active

07123480

ABSTRACT:
A package structure for a semiconductor device comprises a substrate having a main surface and a back surface, a semiconductor chip formed on the main surface of the substrate, a package covering the semiconductor chip, radiation protrude electrodes and connection protrude electrodes. The radiation protrude electrodes are formed on the back surface of the substrate in a chip area where said semiconductor chip is located. Each of the radiation protrude electrodes are formed with a first pitch so that the radiation protrude electrodes make one body joining layer when the package structure is subjected to a heat treatment. The connection protrude electrodes are formed on the back surface of the substrate in a peripheral area of the chip area. Each of the connection protrude electrodes formed with a second pitch which is larger than the first pitch so that the connection protrude electrodes stay individual when the package structure is subjected to a heat treatment.

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