Package in package semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings

Reexamination Certificate

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Details

C257S621000, C257S777000, C257SE23116, C257SE23123, C257SE23124, C257SE23126, C257SE23194, C257SE25006, C257SE25013, C257SE25018, C257SE25021, C257SE25027

Reexamination Certificate

active

07982298

ABSTRACT:
In accordance with the present invention, there is provided multiple embodiments of a package-in-package semiconductor device including shortened electrical signal paths to optimize electrical performance. In each embodiment, the semiconductor device comprises a substrate having a conductive pattern formed thereon. In certain embodiments, a semiconductor package and one or more semiconductor dies are vertically stacked upon the substrate, and placed into electrical communication with the conductive pattern thereof. One or more of the semiconductor dies may include through-silicon vias formed therein for facilitating the electrical connection thereof to the conductive pattern of the substrate or to other electronic components within the vertical stack. Similarly, the semiconductor package may be provided with through-mold vias to facilitate the electrical connection thereof to other electronic components within the vertical stack. In other embodiments of the present invention, a semiconductor die which is electrically connected to the conductive pattern of the substrate is encapsulated with an inner package body which itself is formed to include through-mold vias used to facilitate the electrical connection thereof to another semiconductor die stacked thereon. In each embodiment of the semiconductor device, the vertically stacked electronic components thereof may be covered with a package body which also partially covers the substrate.

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