Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Die bond
Patent
1997-03-26
1999-10-12
Kelley, Nathan K.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Die bond
257782, 257751, H01L 2348
Patent
active
059659467
ABSTRACT:
A method of mounting a semiconductor device first forms a barrier layer on one surface of an semiconductor substrate made of Si. Then, a first Au layer is formed on the barrier layer. Accordingly, a semiconductor device is provided. The barrier layer is formed of metal for preventing mutual diffusion of Si in the Si semiconductor substrate with Au in the first Au layer at a high temperature of 600.degree. C. or higher. A step of acquiring a package substrate forms a metal coated layer on a base first and then forms a second Au layer on the surface of the metal coated layer. Then, the semiconductor device is placed on the package substrate with the first and second Au layers contacting with each other, and the semiconductor device and the package substrate are scrubbed against each other. Consequently, the first and second Au layers form Au--Au eutectic layer, thereby connect the semiconductor device to the package substrate.
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Kondo Yuji
Yano Akihiro
Kelley Nathan K.
NEC Corporation
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