Semiconductor device manufacturing: process – Including control responsive to sensed condition – Optical characteristic sensed
Reexamination Certificate
2007-02-13
2007-02-13
Lindsay, Jr., Walter (Department: 2812)
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Optical characteristic sensed
C438S692000, C438S752000, C257SE21228, C257SE21304
Reexamination Certificate
active
10976161
ABSTRACT:
A wet-etch composition may include: peracetic acid (PAA); and a fluorinated acid; a relative amount of the PAA in the composition being sufficient to ensure an etch rate of (P-doped-SiGe):(P-doped-Si) that is substantially the same as an etch rate of (N-doped-SiGe):(N-doped-Si). Such a wet-etch composition is hereafter referred to as a PAA-based etchant and can be used to make, e.g., a CMOS MBCFET, an electrode of a capacitor, etc.
REFERENCES:
patent: 4996574 (1991-02-01), Shirasaki
patent: 5371035 (1994-12-01), Pfiester et al.
patent: 5559049 (1996-09-01), Cho
patent: 5583362 (1996-12-01), Maegawa
patent: 5782984 (1998-07-01), Lim et al.
patent: 5846921 (1998-12-01), Gil et al.
patent: 5972124 (1999-10-01), Sethuraman et al.
patent: 6100203 (2000-08-01), Kil et al.
patent: 6171551 (2001-01-01), Malchesky et al.
patent: 6302766 (2001-10-01), Sethuraman et al.
patent: 6326667 (2001-12-01), Sugiyama et al.
patent: 6413802 (2002-07-01), Hu et al.
patent: 6583015 (2003-06-01), Fitzgerald et al.
patent: 6635921 (2003-10-01), Yi et al.
patent: 2002/0111024 (2002-08-01), Small et al.
patent: 195 27 131 (1996-02-01), None
patent: 1985-124615 (1985-07-01), None
patent: 61281873 (1986-12-01), None
patent: 1996-208633 (1996-08-01), None
patent: 1997-100452 (1997-04-01), None
patent: 2000-212776 (2000-08-01), None
patent: 2001-316691 (2001-11-01), None
patent: 2002-353443 (2002-12-01), None
patent: 2003-183652 (2003-07-01), None
patent: P1999-0011951 (1999-02-01), None
patent: 00251649 (2000-01-01), None
patent: WO 00/79602 (2000-12-01), None
patent: WO 02/47144 (2002-06-01), None
T. K. Carns, et al., “Chemical Etching of Si1-xGexin HF :H2O2:CH3COOH”, J. Electrochem. Soc., vol. 142, No. 4, Apr. 1995.
Translation of German Office Action dated Aug. 7, 2006.
Choi Sang-jun
Hong Chang-ki
Ko Hyung-ho
Lee Hyo-san
LandOfFree
PAA-based etchant, methods of using same, and resultant... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with PAA-based etchant, methods of using same, and resultant..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and PAA-based etchant, methods of using same, and resultant... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3817616