Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Group ii-vi compound
Reexamination Certificate
2005-02-03
2009-11-03
Cao, Phat X (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Including semiconductor material other than silicon or...
Group ii-vi compound
C257S613000, C257S103000, C257SE33022, C257SE33020, C257SE33019
Reexamination Certificate
active
07612432
ABSTRACT:
It is an object to provide a p-type ZnS based semiconductor material having a low resistance which can easily form an ohmic contact to a metallic material. Moreover, the invention provides a semiconductor device and a semiconductor light emitting device which include an electrode having a low resistance on a substrate other than a single crystal substrate, for example, a glass substrate.The semiconductor material according to the invention is used as a hole injecting electrode layer of a light emitting device and has a transparent property in a visible region which is expressed in a composition formula of Zn(1-α-β-γ)CuαMgβCdγS(1-x-y)SexTey(0.004≦α≦0.4, β≦0.2, γ≦0.2, 0≦x≦1, 0≦y≦0.2, and x+y≦1).
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Japanese Office Action dated Jun. 11, 2008.
Kawazoe Hiroshi
Orita Masahiro
Yanagita Hiroaki
Cao Phat X
Garrity Diana C
Hoya Corporation
Sughrue & Mion, PLLC
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