P-type semiconductor manufacturing method and semiconductor...

Details P-type semiconductor manufacturing method and semiconductor... P-type semiconductor manufacturing method and semiconductor...

2006-04-18

2006-04-18

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S542000, C438S766000, C438S795000

Reexamination Certificate

active

07029939

ABSTRACT:
A p-GaN layer5comprising materials such as a Group III nitride compound semiconductor is formed on a sapphire substrate1through MOVPE treatment, and a first metal layer6made of Co/Au is formed thereon. Then in a planar electron beam irradiation apparatus using plasma, electron beams are irradiated to the p-GaN layer5through the first metal layer6. Accordingly, the first metal layer6prevents the surface of the p-GaN layer5from being damaged and resistivity of the p-GaN layer5can be lowered. Next, a second metal (Ni) layer10is formed on the first metal layer6. And the first metal layer6is etched through the second metal layer10by using fluoric nitric acid. As a result, the first metal layer is almost completely removed. Then a light-transmitting p-electrode7made of Co/Au is formed thereon. As a result, a p-type semiconductor having decreased contact resistance and lower driving voltage can be obtained and optical transmittance factor of the p-type semiconductor improves.

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Translation of International Preliminary Examination Report dated Dec. 18, 2003.

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