Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1998-01-06
2000-11-21
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 22, H01L 3300
Patent
active
061506729
ABSTRACT:
A Group III-nitride semiconductor device that has a low voltage-drop p-contact and comprises a substrate layer, a metal electrode and an intermediate layer sandwiched between the substrate layer and the metal electrode. The substrate layer is a layer of a p-type Group III-nitride semiconductor, and the intermediate layer includes a Group III-nitride semiconductor in which atoms of a Group V element other than nitrogen have been substituted for a fraction of nitrogen atoms. The Group III-nitride semiconductor device is made by providing a substrate including a p-type Group III-nitride semiconductor having an exposed surface. Atoms of a Group V element other than nitrogen are substituted for a fraction of the nitrogen atoms of the p-type Group III-nitride semiconductor to form an intermediate layer extending into the p-type Group III-nitride semiconductor from the exposed surface. Metal is then deposited on the exposed surface to form an electrode in electrical contact with the intermediate layer.
REFERENCES:
patent: 5689123 (1997-11-01), Major et al.
patent: 5693963 (1997-12-01), Fujimoto et al.
patent: 5786603 (1998-07-01), Rennie et al.
patent: 5834331 (1998-11-01), Razeghi
T. Mori et al., "Low Contact Resistivities on P-Type by using InGaN Contact layer", Extended Abstracts (The 57.sup.th Autumn Meeting, 1996), The Japan Society of Applied Physics, No. 1, 10a-ZF-9, p. 298.
M. E. Lin et al., "Nonalloyed Ohmic Contacts on GaN using InN/GaN Short-Period Superlattice", Appl. Phys. Lett., vol. 64, No. 19 (1994), pp. 2557-2559.
S. Miyoshi and K. Onaba, "Semi-Emperical Tight-Binding Calculation of the Electronic Structure of GaP1-xNx (x=0.25, 0.5, 0.75) Alloys", Topical Workshop pm III-V Nitrides Sep. 21-23, 1995, Nagoya Japan, P-1.
Shiro Sakai et al., "Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron", Jpn. J. Appl. Phys., vol. 32 (1993), pp. 4413-4417.
Agilent Technologies
Chaudhuri Olik
Wille Douglas A.
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