Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from liquid combined with subsequent diverse...
Patent
1998-04-15
2000-01-25
Chaudhuri, Olik
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from liquid combined with subsequent diverse...
438509, 117 89, 257103, H01L 3118
Patent
active
060178078
ABSTRACT:
After p-type gallium nitride compound semiconductor layers, to which p-type impurity is added, are formed by virtue of chemical vapor deposition, the p-type gallium nitride compound semiconductor layers are thermally annealed at more than 400.degree. C. or more than 700.degree. C. while supplying a flow of an inert gas in parallel to a substrate surface at a predetermined flow rate or more. Otherwise, the p-type gallium nitride compound semiconductor layers are thermally annealed at more than 400.degree. C. or more than 700.degree. C. in an inert gas atmosphere having a predetermined pressure or more. According to the annealing process, the p-type impurity can be more effectively activated, so that p-type gallium nitride compound semiconductor layers which have fewer crystal defects, etc. and have lower resistivity can be formed.
REFERENCES:
patent: 5468678 (1995-11-01), Nakamura et al.
Furukawa Chisato
Ishikawa Masayuki
Isomoto Kenji
Sugawara Hideto
Chaudhuri Olik
Kabushiki Kaisha Toshba
Wille Douglas A.
LandOfFree
P-type GaN compound semiconductor and method for manufacturing t does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with P-type GaN compound semiconductor and method for manufacturing t, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and P-type GaN compound semiconductor and method for manufacturing t will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2315513