Electric lamp and discharge devices: systems – Cathode ray tube circuits – Combined cathode ray tube and circuit element structure
Patent
1985-12-23
1988-08-09
Moore, David K.
Electric lamp and discharge devices: systems
Cathode ray tube circuits
Combined cathode ray tube and circuit element structure
313103R, 313446, 313399, 313352, 313387, 315 511, 315 36, 315 393, 315 121, 330 42, 330308, 330 44, 357 29, 357 13, H01J 3126, H04N 314
Patent
active
047630434
ABSTRACT:
A crossed-field amplifier has a cathode in the form of a P-N junction semiconductor which is biased to the conductive state to cause the crossed-field amplifier to amplify. The P and N regions of the semiconductor are connected to an energy source which is pulsed to produce conduction in the P-N junction and thereby allow secondary emission from the cathode. A reverse bias voltage prevents secondary emission from the cathode. The tube requires only low voltages to be applied to the cathode P-N junction to completely deactivate the crossed-field amplifier tube without requiring the removal of the RF drive pulse applied to the cathode- or anode-slow-wave circuit and without requiring the removal of the DC high voltage power supply which therefore need not be pulsed.
REFERENCES:
patent: 3244922 (1966-04-01), Wolfgang
patent: 3458754 (1969-07-01), Peters, Jr.
patent: 3646388 (1972-02-01), Dudley et al.
patent: 4200821 (1980-04-01), Bekefi et al.
patent: 4325084 (1982-04-01), van Gorkom et al.
patent: 4331506 (1982-05-01), Sasano et al.
patent: 4410833 (1983-10-01), Ganguly et al.
patent: 4434387 (1984-02-01), MacMaster et al.
patent: 4513308 (1985-04-01), Greene et al.
patent: 4556817 (1985-12-01), Kusano et al.
patent: 4574216 (1986-03-01), Hoeberechts et al.
patent: 4677342 (1987-06-01), MacMaster et al.
MacMaster George H.
Nichols Lawrence J.
Moore David K.
Powell Mark R.
Raytheon Company
Santa Martin M.
Sharkansky Richard M.
LandOfFree
P-N junction semiconductor secondary emission cathode and tube does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with P-N junction semiconductor secondary emission cathode and tube, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and P-N junction semiconductor secondary emission cathode and tube will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-920226