P-N junction etch-stop technique for electrochemical etching of

Details P-N junction etch-stop technique for electrochemical etching of P-N junction etch-stop technique for electrochemical etching of

1994-05-20

1995-11-07

Valentine, Donald R.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

20412955, 2041297, 20412975, C25F 312, C25F 314

Patent

active

054645093

ABSTRACT:
A method of electrochemical machining of micromechanical structures from a silicon substrate having both p and n-type regions in hydrofluoric electrolyte solution is disclosed. Only the p-type region of the silicon substrate may be selectively etched by providing means for inhibiting the injection of holes from the p-type region through the n-type region. Inhibiting the injection of holes includes forming a p-type layer over the n-type region, forming a layer of material inert to the electrochemical etchant over the n-type region, imposing a reverse electrical bias between the p-type region and n-type region, and providing recombination centers in the n-type region to induce recombination of holes injected into the n-type region.

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