P-I-N photodiode with transparent conductor n+layer

Details P-I-N photodiode with transparent conductor n+layer P-I-N photodiode with transparent conductor n+layer

1995-02-02

1996-06-18

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257414, 257431, 257432, 257434, 257461, H01L 2714, H01L 2982, H01L 2984, H01L 31075

Patent

active

055280714

ABSTRACT:
The elimination of the spatial variation in the frequency response of large area p-i-n photodiodes is disclosed using indium tin oxide (ITO) n.sup.+ material as a transparent contact overlayer. The I-V, C-V, and frequency response characteristics are shown for p-i-n photodiodes fabricated with and without the ITOn.sup.+ contact overlayer to demonstrate the superior performance of the indium-tin-oxide p-i-n photodiode. Also, a p-i-n photodiode can be structured using an ITOn.sup.+ window layer to extend the operating range to shorter optical wavelengths, for example, from 1.0 .mu.m down to 0.4 .mu.m.

REFERENCES:
patent: 4633287 (1986-12-01), Yamazaki
patent: 4796084 (1989-01-01), Kamasaki
patent: 4885622 (1989-12-01), Uchiyama et al.
David Constantine, Molecular-Beam Epitaxial Growth, and Characterization of Aluminum Gallium Arsenide/Indium Gallium Arsenide Single Quantum-Well Modulation-Doped Field-Effect Transistor Structures, Dissertation Cornell University, p. 235.
Sacks et al., Effects of Hot Sources on Residual Doping in GaAs Grown by Molecular Beam Epitaxy, Appl. Phys. Lett. vol. 52, No. 12, p. 997.
Salmon et al., The Effect of Aluminum Composition on Silicon Donor Behavior in AlxGa(1-x)As, J. Vac. Sci. Technol. B 2 (2), p. 197.
Heiblum et al., Summary Abstract: High Purity GaAs and AlGaAs Grown by MBE, J. Vac. Sci. Technol. B 2 (2), p. 233.
Davies et al., The Growth and Characterization of Nominally Undoped Al(1-x)lnxAs Grown by Molecular Beam Epitaxy, J. Vac. Sci. Technol. B 2 (2), p. 219.

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