P-collector H.V. PMOS switch VT adjusted source/drain

Details P-collector H.V. PMOS switch VT adjusted source/drain P-collector H.V. PMOS switch VT adjusted source/drain

1996-09-03

1998-06-23

Wallace, Valencia Martin

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257339, 257342, 257344, 257345, 257408, 257409, 438286, 438298, 438305, 438306, H01L 2976, H01L 2994, H01L 31062

Patent

active

057708800

ABSTRACT:
A PMOS device has an n-type body 12 and a triple source drain diffusion. A first drain region 14 is heavily p-doped to provide ohmic contact to the drain. A lightly doped drain region 16 extends to and beneath a portion of the gate 20. A third shallow moderately p-doped region 50 extends from beneath a portion of the gate into the second lightly doped region. The third region 50 counteracts a radiation induced gate inversion layer and reduces the on resistance of the PMOS device.

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