Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
1999-04-15
2008-12-09
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S331000, C257S341000, C257S342000
Reexamination Certificate
active
07462910
ABSTRACT:
A low voltage P-channel power MOSFET using trench technology has an epitaxially deposited constant concentration N channel region adjacent the side walls of a plurality of trenches. The constant concentration channel region is deposited atop a P+substrate and receives P+source regions at the tops of each trench. The source contact is connected to both source and channel regions for a unidirectional conduction device, or only to the source regions for a bidirectional device.
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A High-Density Ultra-Low Rdson 30 Volt N-Channel Trench FETs for DC/DC Converter Applications, El Segundo CA, pp. 1-4, Sodhi R; Malik R; Asselanis D; and Kinzer D, “Proceedings of International Symposium of Power Semiconductor Devices and ICs (ISPSD)”, May 26, 1999. IEEE Catalog #99CH36312, pp. 303-306.
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Hu Shouxiang
International Rectifier Corporation
Ostrolenk Faber Gerb & Soffen, LLP
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