P-channel transistor

Details P-channel transistor P-channel transistor

1995-06-07

1996-08-06

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257357, 257355, H01L 2362

Patent

active

055436420

ABSTRACT:
A p-channel transistor has a drain electrode (12), a source electrode (13), a gate electrode (16) and a bulk electrode (14), the drain and source electrodes (12, 13) being constructed as p-regions in an n-well (10) and the well (10) itself being embedded in a surrounding p-region.
The bulk electrode is simultaneously the well terminal and is connected to the source electrode (13), while the drain electrode (12) is connected to the positive pole (U.sup.+) of the operating voltage. This arrangement confers a reliable resistance to polarity reversal in conjunction with a minimum area requirement; even at relatively high temperatures, only negligible leakage currents flow; and, there is a need only for a single well (10) on which it is also possible to accommodate still other components.

REFERENCES:
patent: 3789503 (1974-02-01), Nishida et al.
Muller et al., Device Elec for IC's, pp. 455-457, 1986.
IEEE Electron Device Letters; vol. EDL-7, No. 1, Jan. 1986, New York, US, pp. 20-22; Noboru Shiono et al..

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