P-channel thin film transistor having a gate on the drain region

Details P-channel thin film transistor having a gate on the drain region P-channel thin film transistor having a gate on the drain region

1997-09-25

2000-04-04

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 59, 257347, 257368, 257329, 257330, 257332, H01L 2976

Patent

active

06046478&

ABSTRACT:
A device structure and a method of forming the structure comprising a thin film transistor (TFT) in a contact opening of a conventional field effect transistor (FET) by using .alpha.-silicon in the opening and the vertical portion of the .alpha.-silicon functioning as the channel for the TFT and both the FET and TFT sharing a common drain contact.

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