P-channel MOS transistor

Details P-channel MOS transistor P-channel MOS transistor

1996-12-05

1999-04-13

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257343, 257408, 257506, 257351, 257500, H01L 2976, H01L 2994, H01L 31062, H01L 2900

Patent

active

058941541

ABSTRACT:
The specification describes a p-channel MOS with self-aligned source and drain, and fabricated by a process that is fully compatible with simultaneously forming complementary self-aligned n-channel MOS devices and complementary IGBT devices.

REFERENCES:
patent: 5381031 (1995-01-01), Shibib
patent: 5650658 (1997-07-01), Beason
Tomohide Terashima et al, "Over 1000V n-ch LDMOSFET and p-ch LIGBT with JI RESURF Structure and Multiple Floating Field Plate", Proceedings of the 1995 International Symposium on Power Semiconductor Devices & ICs, Yokohama, pp. 11.2, 1995.
M. Ayman Shibib et al, "A Cost-Effective Smart Power BiCMOS Technology", Proceedings of the 7th International Symposium on Power Semiconductor Devices & ICs, Yokohama, pp. 48-53, 1995.
J.A. Appels and H.M. Jaes, "High Voltage Thin Layer Devices (Resurf Devices)", IEDM Tech. Dig., pp. 238-241, 1979.

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