P-channel field-effect transistor with reduced junction...

Details P-channel field-effect transistor with reduced junction... P-channel field-effect transistor with reduced junction...

2006-12-05

2006-12-05

Ghyka, Alexander (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S336000, C257S372000, C257SE29028

Reexamination Certificate

active

07145191

ABSTRACT:
The source/drain zones (140and142or160and162) of a p-channel IGFET (120or122) are provided with graded-junction characteristics to reduce junction capacitance, thereby increasing switching speed. Each source/drain zone contains a main portion (140M,142M,160M, or162M) and a more lightly doped lower portion (140L,142L,160L, or162L) underlying, and vertically continuous with, the main portion.

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