Ozone vapor clean method

Details Ozone vapor clean method Ozone vapor clean method

2007-01-02

2007-01-02

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S424000, C438S436000, C438S437000, C438S706000, C438S745000, C257SE21002

Reexamination Certificate

active

10850747

ABSTRACT:
A method for cleaning and forming an oxide film on a surface, particularly a silicon surface. The surface is initially cleaned and then exposed to ozone vapor, which forms the oxide film on the surface. The method is particularly useful for forming a pre-liner oxide film on trench surfaces in the fabrication of STI (shallow trench isolation) structures.

REFERENCES:
patent: 6848455 (2005-02-01), Shrinivasan et al.
patent: 6933206 (2005-08-01), Beintner et al.

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