Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-03-15
2005-03-15
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S781000, C438S782000, C438S763000, C438S770000, C438S692000, C430S329000
Reexamination Certificate
active
06867150
ABSTRACT:
The invention concerns an ozone treatment method and an ozone treatment apparatus for performing a treatment such as the formation and reformation of an oxide film, the removal of a resist film by blowing an ozone gas onto a surface of a substrate such as a semiconductor substrate or liquid crystal substrate. The ozone treatment apparatus1includes: a placement table20on which the substrate K is placed; a heating unit for heating the substrate K placed on the placement table20; an opposed plate40, disposed opposite the substrate K, for discharging the ozone gas through a discharge port44formed in a surface facing the substrate K, a gas feeding means43for feeding the ozone gas into the discharge port44; a lifter30for moving the placement table20up and down; and a control unit35for controlling the operation of said lifter30. During the discharge of the ozone gas, the control unit35operates the lifter30so as to vary the spacing g between the opposed plate40and the substrate K placed on the placement table20.
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patent: 20020115025 (2002-08-01), Noda et al.
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Kanayama Tokiko
Kikuchi Tatsuo
Yamaguchi Yukitaka
Yamanaka Takeo
Keshavan Belur
Smith Matthew
Sumitomo Precision Products Co. Ltd.
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