Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2000-09-21
2002-06-04
Niebling, John F. (Department: 2812)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C430S330000, C430S331000, C430S319000, C430S258000
Reexamination Certificate
active
06399513
ABSTRACT:
CROSS-REFERENCE TO RELATED APPLICATIONS
The following co-pending applications are related and are hereby incorporated by reference:
Serial No.
Filing Date
Inventors
09/667,154
09/21/2000
Jung et al.
09/666,974
09/21/2000
Jung et al.
09/666,576
09/21/2000
Murphy et al.
FIELD OF THE INVENTION
The invention is generally related to the field of resist patterning of semiconductor devices and more specifically to resist strip and metal removal processes.
BACKGROUND OF THE INVENTION
In the fabrication of semiconductor devices, photoresist patterns are routinely used for delineating certain areas of the semiconductor device, for example, for patterned etching and ion implantation. After the etch or implantation sequence, the resist pattern must be removed. This is referred to as a resist strip. Additionally, any resist residue must also be removed. Currently, an ozonated H
2
SO
4
operated at 130° C. or a combined solution of H
2
SO
4
and H
2
O
2
are widely used for resist strip. To reduce particles, the above resist strip process is followed by a SC1 (H
2
O:NH
4
OH:H
2
O
2
) megasonic cleanup. Alternatively, a deionized water (DIW) scrub may be used for particle removal.
Unfortunately, the chemicals described above for resist strip are not environmentally safe and require special precautions for handling and disposal. Furthermore, sulfur compounds have been found to be left on wafer surfaces after the H
2
SO
4
cleanups, which may cause corrosions or work function shifts on devices. The SC1 clean-up may result in NH
3
abatement. If the alternative DIW scrub is used, two process tools are required. Accordingly, a resist strip and particle removal process is desired that is environmentally safe and overcomes the above mentioned particle removal problems.
U.S. Pat. No. 5,464,480 describes a process for removing organic materials such as photoresist without the use of H
2
SO
4
and H
2
O
2
. Wafers are placed in a tank containing chilled deionized water. Ozone is diffused into the chilled deionized water to oxidize the organic material from the wafer surface. This process requires the addition of a chiller to current process equipment.
SUMMARY OF THE INVENTION
The invention is a method and apparatus for resist pattern strip and metal removal that uses an ozonated deionized water with HCl spiking at the end of the process for metal contamination removal. An advantage of the invention is providing a ozonated deionized water resist strip that results in reduce metal contamination and that is environmentally safe.
This and other advantages will be apparent to those of ordinary skill in the art having reference to the specification in conjunction with the drawings.
REFERENCES:
patent: 5776296 (1998-07-01), Matthews
patent: 5882489 (1999-03-01), Bersin et al.
patent: 6009888 (2000-01-01), Ye et al.
patent: 6130169 (2000-10-01), Shields et al.
patent: 6143637 (2000-11-01), Yagi
patent: 6158445 (2000-12-01), Olesen et al.
patent: 6183942 (2001-02-01), Kim et al.
patent: 6191086 (2001-02-01), Leon et al.
patent: 6200736 (2001-03-01), Tan
Jung Claire Ching-Shan
Mathews Danny F.
Murphy Neal T.
Brady III W. James
Garner Jacqueline J.
Luk Olivia T
Niebling John F.
Telecky , Jr. Frederick J.
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