Oxynitride film and its manufacturing method

Details Oxynitride film and its manufacturing method Oxynitride film and its manufacturing method

1980-12-11

1982-05-25

Herbert, Jr., Thomas J.

Stock material or miscellaneous articles

Composite

Of metal

148 333, 427 82, 427 88, 428689, 428697, 428698, 428702, B32B 1504, H01L 300

Patent

active

043317375

ABSTRACT:
The oxynitride film according to the present invention contains Ga and/or Al and has O/N ratio of at least 0.15. This film is obtained by relying on, for example, chemical vapor deposition technique. The O/N ratio in the film may be varied by, for example, varying the distance between the substrate and the substance-supply source, or by varying the proportion of an oxidizing gas contained in a carrier gas. This film is used either as a surface passivation film of III-V compound semiconductors such as GaAs, or as an insulating film for active surface portions of IG-FET, or as an optical anti-reflective film.

REFERENCES:
patent: 4018631 (1977-04-01), Hale
patent: 4172906 (1979-10-01), Pancholy
D. M. Brown et al., J. Electrochem. Soc., vol. 115, 1968, p. 311.
I. Shiota et al., vol. J. Electrochem. Soc., vol. 124, No. 9, 1977, pp. 1405-1409.
T. L. Chu, J. Electrochem. Soc., vol. 118, 1971, p. 1200.
Hariu et al., Appl. Phys. Lett., vol. 32, 1978, p. 252.

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