Oxynitride film and its manufacturing method

Details Oxynitride film and its manufacturing method Oxynitride film and its manufacturing method

1982-02-24

1984-03-13

Newsome, John H.

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

204192N, 427 38, 427 39, 427 82, 427 99, 427162, B05D 500, C23C 1100, C23C 1500

Patent

active

044367708

ABSTRACT:
The oxynitride film according to the present invention contains Ga and/or Al and has O/N ratio of at least 0.15. This film is obtained by relying on, for example, chemical vapor deposition technique. The O/N ratio in the film may be varied by, for example, varying the distance between the substrate and the substance-supply source, or by varying the proportion of an oxidizing gas contained in a carrier gas. This film is used either as a surface passivation film of III-V compound semiconductors such as GaAs, or as an insulating film for active surface portions of IG-FET, or as an optical anti-reflective film.

REFERENCES:
patent: 3793068 (1974-02-01), Pammer
patent: 3974003 (1976-08-01), Zirinsky et al.
patent: 4018631 (1977-04-01), Hale
patent: 4172158 (1979-10-01), Li
patent: 4172906 (1979-10-01), Pancholy
Brown et al., "J. Electrochem. Soc." vol. 115, (1968), p. 311.
Shiota et al., "J. Electrochem. Soc." vol. 124, (1977), pp. 1405-1409.
Chu, "J. Electrochem. Soc." vol. 118, (1971), p. 1200.
Hariu et al., "Appl. Phys. Let." vol. 32, (1978), p. 252.

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