Oxygen scavenging in a plasma reactor

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156345, 427111, 427569, 423594, H01L 2100

Patent

active

052542165

ABSTRACT:
Trace amounts of oxygen are removed from a plasma reactor by heating a filament during the times the reactor is not processing to cause the filament to react with the oxygen in the reactor, and forms an oxide of the filament material and the oxygen.

REFERENCES:
patent: 4800070 (1989-01-01), Carlin et al.
patent: 4927398 (1990-05-01), Shaffer
patent: 5068007 (1991-11-01), Rogers et al.
Plasma Etching in Semiconductor Fabrication; ed. Russ A. Morgan; .COPYRGT.1985; N.Y., N.Y.; pp. 96-97.

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