Oxygen precipitation control in Czochralski-grown silicon crysta

Details Oxygen precipitation control in Czochralski-grown silicon crysta Oxygen precipitation control in Czochralski-grown silicon crysta

1995-06-07

1998-08-18

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117916, 117931, C30B 1520

Patent

active

057953821

ABSTRACT:
A method for controlling oxygen precipitation (106) in a silicon crystal (12) grown according to the Czochralski silicon crystal growing technique which includes the steps of forming a cylindrical portion (22) of the silicon crystal (12) from a reservoir of molten silicon (24) according to the Czochralski silicon crystal growing technique. The method includes the steps of terminating the Czochralski silicon crystal growing technique by forming a first tapered portion (101) in silicon crystal (12) at a predetermined rate. A second tapered portion (102) includes a cascaded middle portion (108) that connects to the first tapered portion (101) and that concentrates oxygen precipitation (106) within cascaded middle portion (108) and away from the cylindrical portion (22) of silicon crystal (12). At least a third tapered portion (104) is formed for separating silicon crystal (12) from molten silicon (24).

REFERENCES:
patent: 4040895 (1977-08-01), Patrick et al.
patent: 4511428 (1985-04-01), Ghosh et al.

Affiliated with

Also associated with

Rating

Oxygen precipitation control in Czochralski-grown silicon crysta does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Oxygen precipitation control in Czochralski-grown silicon crysta, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Oxygen precipitation control in Czochralski-grown silicon crysta will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1111237