Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant – For compound semiconductor
Reexamination Certificate
2008-11-20
2010-02-23
Smoot, Stephen W (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
With specified dopant
For compound semiconductor
C257S615000, C257SE31019, C438S483000, C117S088000
Reexamination Certificate
active
07667298
ABSTRACT:
Oxygen is doped into a gallium nitride crystal by preparing a non-C-plane gallium nitride seed crystal, supplying material gases to the seed crystal, growing a non-C-plane gallium nitride crystal on the seed crystal and allowing oxygen to infiltrate via a non-C-plane surface to the growing crystal. Otherwise, oxygen is doped into the crystal by preparing a C-plane gallium nitride seed crystal or a three-rotationally symmetric plane foreign material seed crystal, supplying material gases to the C-plane seed crystal or the foreign seed crystal, growing a faceted C-plane gallium nitride crystal having facets of non-C-planes on the seed crystal, maintaining the facets on the crystal and allowing oxygen to infiltrate via the non-C-plane facets to the crystal.
REFERENCES:
patent: 5821568 (1998-10-01), Morita et al.
patent: 5909036 (1999-06-01), Tanaka et al.
patent: 6072197 (2000-06-01), Horino et al.
patent: 6086673 (2000-07-01), Molnar
patent: 6107162 (2000-08-01), Morita et al.
patent: 6218280 (2001-04-01), Kryliouk et al.
patent: 6225650 (2001-05-01), Tadamoto et al.
patent: 6335546 (2002-01-01), Tsuda et al.
patent: 6411636 (2002-06-01), Ota et al.
patent: 6468347 (2002-10-01), Motoki et al.
patent: 6509651 (2003-01-01), Matsubara et al.
patent: 6542526 (2003-04-01), Niwa et al.
patent: 6576533 (2003-06-01), Tomiya et al.
patent: 6613143 (2003-09-01), Melnik et al.
patent: 6773504 (2004-08-01), Motoki et al.
patent: 7012318 (2006-03-01), Motoki et al.
patent: 2002/0011599 (2002-01-01), Motoki et al.
patent: 2002/0028564 (2002-03-01), Motoki et al.
patent: 2002/0063258 (2002-05-01), Motoki
patent: 2006/0097353 (2006-05-01), Motoki et al.
patent: 967664 (1999-12-01), None
patent: 1 088 914 (2001-04-01), None
patent: 1 172 464 (2002-01-01), None
patent: 11-340576 (1999-12-01), None
patent: 2000-12900 (2000-01-01), None
patent: 2000-22212 (2000-01-01), None
patent: 2000-44400 (2000-02-01), None
patent: 2001-102307 (2001-04-01), None
patent: 2002-29897 (2002-01-01), None
Hiramatsu, et al., “Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy”, Materials Science and Engineering B59 (1999) pp. 104-111.
Invitation Thesis, Collection of Theses of Electronic Information Communication Society C-II vol. J81-C-II No. 1 pp. 58-64, Jan. 1998 “Thick Layer Growth of GaN by Hydride Vapor Phase Epitaxy”, Akira Usui.
Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate, Jpn. J. Appl. Phys. vol. 40 (2001) pp. L140-L143, Part 2, No. 2B, Feb. 15, 2001.
Motoki Kensaku
Ueno Masaki
Smith , Gambrell & Russell, LLP
Smoot Stephen W
Sumitomo Electric Industries Ltd.
LandOfFree
Oxygen-doped n-type gallium nitride freestanding single... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Oxygen-doped n-type gallium nitride freestanding single..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Oxygen-doped n-type gallium nitride freestanding single... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4187589