Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant – For compound semiconductor
Reexamination Certificate
2006-03-14
2006-03-14
Smoot, Stephen W. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
With specified dopant
For compound semiconductor
C257S615000, C257S628000
Reexamination Certificate
active
07012318
ABSTRACT:
Oxygen can be doped into a gallium nitride crystal by preparing a non-C-plane gallium nitride seed crystal, supplying material gases including gallium, nitrogen and oxygen to the non-C-plane gallium nitride seed crystal, growing a non-C-plane gallium nitride crystal on the non-C-plane gallium nitride seed crystal and allowing oxygen to infiltrate via a non-C-plane surface to the growing gallium nitride crystal. Otherwise, oxygen can be doped into a gallium nitride crystal by preparing a C-plane gallium nitride seed crystal or a three-rotationally symmetric plane foreign material seed crystal, supplying material gases including gallium, nitrogen and oxygen to the C-plane gallium nitride seed crystal or the three-rotationally symmetric foreign seed crystal, growing a faceted C-plane gallium nitride crystal having facets of non-C-planes on the seed crystal, maintaining the facets on the C-plane gallium nitride crystal and allowing oxygen to infiltrate via the non-C-plane facets to the gallium nitride crystal.
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Motoki Kensaku
Ueno Masaki
Smith , Gambrell & Russell, LLP
Smoot Stephen W.
Sumitomo Electric Industries Ltd.
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