Oxygen-doped in-situ doped amorphous silicon multilayer gate str

Details Oxygen-doped in-situ doped amorphous silicon multilayer gate str Oxygen-doped in-situ doped amorphous silicon multilayer gate str

1996-11-05

1999-04-06

Booth, Richard

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438761, H01L 213205, H01L 214763

Patent

active

058917942

ABSTRACT:
A method of manufacturing a semiconductor device to prevent uneven polysilicon gate dopant accumulation at the gate/gate oxide interface. A layer of gate oxide is formed on the surface of the silicon substrate, a layer of amorphous silicon is deposited on the gate oxide and a doped layer of amorphous silicon is deposited on the first layer. The first and second layers are deposited by chemical vapor deposition and an oxygen containing gas is selectively injected into the stream of silicon source gas depositing the first and second layers of amorphous silicon.

REFERENCES:
patent: 4354309 (1982-10-01), Gardiner et al.
patent: 5147813 (1992-09-01), Woo
patent: 5445982 (1995-08-01), Hwang
Ren et al., "Deposition and Characterization of polysilicon films deposited by rapid thermal processing", Journal of Vacuum Science Technology B 10(3), pp. 1081-1086, May 1992.

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