Oxygen bridge structures and methods to form oxygen bridge...

Details Oxygen bridge structures and methods to form oxygen bridge... Oxygen bridge structures and methods to form oxygen bridge...

2006-04-25

2006-04-25

Lee, Hsien-Ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S751000, C257S753000, C438S627000, C438S643000, C438S653000

Reexamination Certificate

active

07034397

ABSTRACT:
A method is proposed for improving the adhesion between a diffusion barrier film and a metal film. Both the diffusion barrier film and the metal film can be deposited in either sequence onto a semiconductor substrate. A substrate comprising a first film, which is one of a diffusion barrier film or a metal film, with the first film being exposed at least at part of the surface area of the substrate, is exposed to an oxygen-containing reactant to create a surface termination of about one monolayer of oxygen-containing groups or oxygen atoms on the exposed parts of the first film. Then the second film, which is the other one of a diffusion barrier film and a metal film, is deposited onto the substrate. Furthermore, an oxygen bridge structure is proposed, the structure comprising a diffusion barrier film and a metal film having an interface with the diffusion barrier film, wherein the interface comprises a monolayer of oxygen atoms.

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