Oxidizing aqueous cleaner for the removal of post-etch residues

Details Oxidizing aqueous cleaner for the removal of post-etch residues Oxidizing aqueous cleaner for the removal of post-etch residues

2011-04-12

2011-04-12

Webb, Gregory E (Department: 1761)

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

C510S175000, C510S176000

Reexamination Certificate

active

07922824

ABSTRACT:
An oxidizing aqueous cleaning composition and process for cleaning post-plasma etch residue and/or hardmask material from a microelectronic device having said residue thereon. The oxidizing aqueous cleaning composition includes at least one oxidizing agent, at least one oxidizing agent stabilizer comprising an amine species selected from the group consisting of primary amines, secondary amines, tertiary amines and amine-N-oxides, optionally at least one co-solvent, optionally at least one metal-chelating agent, optionally at least one buffering species, and water. The composition achieves highly efficacious cleaning of the residue material from the microelectronic device while simultaneously not damaging the interlevel dielectric and metal interconnect material also present thereon.

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