Oxidized oxygen-doped amorphous silicon ultrathin gate oxide str

Details Oxidized oxygen-doped amorphous silicon ultrathin gate oxide str Oxidized oxygen-doped amorphous silicon ultrathin gate oxide str

1996-11-26

1999-07-27

Chaudhari, Chandra

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

438486, 438 96, 438966, H01L 21314

Patent

active

059306580

ABSTRACT:
A method of manufacturing a semiconductor device to negate the effects on the device performance caused by defects on the silicon substrate. An oxygen doped amorphous silicon layer is deposited onto the gate region of the semiconductor device and can have a thickness of less than 5 nanometers. The amorphous silicon provides a conformal layer over the defects on the silicon substrate. The oxygen doping of the amorphous silicon maintains the conformality of the amorphous silicon layer during subsequent processing by preventing the formation of large amorphous silicon grains during a crystallization process. The resulting silicon oxide layer has increased uniformity and can have a thickness of less than 10 nanometers.

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