Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or...
Patent
1991-07-10
1993-10-26
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Including semiconductor material other than silicon or...
257 33, 257 34, 257 35, 257 36, 257473, 257485, 257661, 257662, 257663, 505 1, H01L 3922, H01L 2948, H01L 2956, H01L 29161
Patent
active
052568970
ABSTRACT:
An oxide superconducting device has a junction structure composed of at least one oxide superconductor and at least one insulator in which carriers have been generated. As the insulator in which carriers have been generated, there can be used, for example, SrTiO.sub.3 doped with Nb. With such a device, rectifying characteristics can be attained in the junction.
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Proceedings International Electron Devices Meeting, Dec. 11, 1988, pp. 282-285, San Francisco, U.S.; A. Yoshida et al.: "Monolithic Device Fabrication Using High-Tc Superconductor".
Y. E. Nomoto et al. "Largely Anisotropic Superconducting Critical Current in Epitaxially Grown Ba.sub.2 YAu.sub.3 O.sub.7-y Thin Film", Japanese Journal of Applied Physics, (Jul. 26, 1987) L1248-L-1250.
Physical Review 148 (1966) pp. 280-286.
Aida Toshiyuki
Fukazawa Tokuumi
Hasegawa Haruhiro
Hatano Mutsuko
Nakane Hideaki
Carroll J.
Hitachi , Ltd.
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