Oxide semiconductors and thin film transistors comprising...

Details Oxide semiconductors and thin film transistors comprising... Oxide semiconductors and thin film transistors comprising...

2008-06-19

2010-10-19

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Semiconductor is an oxide of a metal or copper sulfide

C257S072000, C257S064000, C257S075000, C257S065000, C257S066000, C257S070000

Reexamination Certificate

active

07816680

ABSTRACT:
Provided are oxide semiconductors and thin film transistors of the same. An oxide semiconductor includes Zn, In and Hf. The amount of Hf is in the range of about 2-16 at %, inclusive, based on the total amount of Zn, In, and Hf. A thin film transistor includes a gate and a gate insulating layer arranged on the gate. A channel corresponding to the gate is formed on the gate insulating layer. The channel includes an oxide semiconductor. The semiconductor oxide includes Zn, In and Hf. The amount of Hf is in the range of about 2-16 at %, inclusive, based on the total amount of Zn, In, and Hf. A source and a drain contact respective sides of the channel.

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