Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-05-25
2010-10-05
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S197000, C438S513000, C257SE21051, C257SE21077, C257SE21081, C257SE21311, C257SE21400, C257SE21411
Reexamination Certificate
active
07807515
ABSTRACT:
Disclosed is an oxide semiconductor having an amorphous structure, wherein higher mobility and reduced carrier concentration are achieved. Also disclosed are a thin film transistor, a method for producing the oxide semiconductor, and a method for producing the thin film transistor. Specifically disclosed is an oxide semiconductor which is characterized by being composed of an amorphous oxide represented by the following a general formula: Inx+1MZny+1SnzO(4+1.5x+y+2z)(wherein M is Ga or Al, 0≦x≦1, −0.2≦y≦1.2, z≧0.4 and 0.5≦(x+y)/z≦3). This oxide semiconductor is preferably subjected to a heat treatment in an oxidizing gas atmosphere after film formation. Also specifically disclosed is a thin film transistor which is characterized by comprising the oxide semiconductor.
REFERENCES:
patent: 6750352 (2004-06-01), Ono et al.
patent: 2008/0050581 (2008-02-01), Miwa et al.
patent: 2000-044236 (2000-02-01), None
patent: 2006-013433 (2006-01-01), None
patent: 2007-123699 (2007-05-01), None
patent: 2007-142196 (2007-06-01), None
Nature/vol. 432, published on Nov. 25, 2004, pp. 488-492, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors” by Kenji Nomura, Hiromichi Ohta, Akihiro Takagi, Toshiko Kamiya, Masahiro Hirano, and Hideo Hosono.
Kato Hisato
Kato Kyoko
Kawakami Haruo
Sekine Nobuyuki
Fuji Electric Holding Co., Ltd.
Kanesaka Manabu
Nhu David
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