Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-03-22
2005-03-22
Clark, Jasmine (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S775000, C257S178000, C257S079000
Reexamination Certificate
active
06870266
ABSTRACT:
The present invention provides an oxide semiconductor electrode which can realize a combination of high transparency with large surface area and is highly responsive to ultraviolet light, as well as to visible light. The oxide semiconductor electrode comprises a conductive substrate and an oxide semiconductor layer provided on the conductive substrate. The oxide semiconductor layer is a porous layer comprising porous titania particles which have been joined to each other to define interparticulate communicating pores. Preferably, the pores possessed by the titania particles per se have a diameter of 10 to 40 nm, the interparticulate communicating pores have a diameter of 10 to 70 nm, and the titania particles have an average diameter of 10 to 70 nm.
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Mori Midori
Nakamura Masateru
Clark Jasmine
Toyota Jidosha & Kabushiki Kaisha
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