Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1992-09-18
1994-09-27
Breneman, R. Bruce
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
437 56, H01L 2100, H01L 2102, B44C 122, C03C 1500
Patent
active
053504925
ABSTRACT:
A method is disclosed for removing oxide from the surface of a semiconductor body having a thick oxide and an adjoining nitride-covered thin oxide, without subjecting the surface to significant over-etching and thus avoiding degredation of the surface of the semiconductor body. The thick oxide is first etched for a period of time so that a portion of the thick oxide remains, and has a thickness comparable to that of the thin oxide. The nitride covering the thin oxide is next removed without appreciably etching either the remaining portion of the thick oxide or the thin oxide. Finally, the thin oxide and the remaining portion of the thick oxide are removed, without appreciably over-etching the surface of the semiconductor body.
REFERENCES:
patent: 4472240 (1984-09-01), Kameyama
patent: 4713329 (1987-12-01), Fang et al.
Ghandhi, VLSI Fabrication Principles, Wiley & Sons, 1983, pp. 421-430.
Elliot, Integrated Circuit Fabrication Technology, 1989, McGraw-Hill, pp. 59-61, 398, 399.
Sze, VLSI Technology, McGraw-Hill, 1988, p. 197.
Fulford, Jr. Henry J.
Gardner Mark I.
Hall Steven C.
Advanced Micro Devices , Inc.
Breneman R. Bruce
Everhart B.
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