Oxide removal method for improvement of subsequently grown oxide

Details Oxide removal method for improvement of subsequently grown oxide Oxide removal method for improvement of subsequently grown oxide

1992-09-18

1994-09-27

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437 56, 430313, H01L 2100, H01L 2102, B44C 122, C03C 1500

Patent

active

053504917

ABSTRACT:
A method is disclosed for removing oxide from the surface of a semiconductor body having a thick oxide and an adjoining thin oxide, without subjecting the surface to significant over-etching and thus avoiding degradation of the surface of the semiconductor body. A photoresist layer is first deposited covering the thin oxide. The thick oxide is then etched for a period of time so that a portion of the thick oxide remains, and has a thickness comparable to that of the thin oxide. The photoresist layer covering the thin oxide is next removed without appreciably etching either the remaining portion of the thick oxide or the thin oxide. Finally, the thin oxide and the remaining portion of the thick oxide are removed, without appreciably over-etching the surface of the semiconductor body.

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patent: 4558508 (1985-12-01), Kinney et al.
patent: 4806501 (1989-02-01), Baldi et al.
Ghandhi, VLSI Fabrication Principles, Wiley & Sons, 1983, pp. 421-430.
Elliot, Integrated Circuit Fabrication Technology, 1989, Mc Graw-Hill, pp. 59-61, 398, 399.
Sze, VLSI Technology, Mc Graw-Hill, 1988, p. 197.

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