Oxide-like seasoning for dielectric low k films

Details Oxide-like seasoning for dielectric low k films Oxide-like seasoning for dielectric low k films

2006-10-03

2006-10-03

Blum, David S. (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S778000, C438S913000

Reexamination Certificate

active

07115508

ABSTRACT:
A method for seasoning a chamber and depositing a low dielectric constant layer on a substrate in the chamber is provided. In one aspect, the method includes seasoning the chamber with a first mixture comprising one or more organosilicon compounds and one or more oxidizing gases and depositing a low dielectric constant layer on a substrate in the chamber from a second mixture comprising one or more organosilicon compounds and one or more oxidizing gases, wherein a ratio of the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the first mixture is lower than the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the second mixture.

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