Oxide layer patterned by vapor phase etching

Details Oxide layer patterned by vapor phase etching Oxide layer patterned by vapor phase etching

1997-05-29

1999-03-02

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430311, G03F 900

Patent

active

058768793

ABSTRACT:
Hydrogen fluoride undercut of oxide layers may be reduced by using a low pressure mixture of gaseous hydrogen fluoride and gaseous ammonia mixture. Organic photoresists can be used as a masking material when using the gaseous hydrogen fluoride/ammonia mixture without resulting in an enhanced reaction rate. In addition, because of the reaction conditions, the dimensions in the oxide layer being etched can be specifically sized smaller than openings made in the overcoating masking material.

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T.K. Whidden et al.; Catalyzed HF Vapor Etching Of Silicon Dioxide For Micro-And Nanolithographic Masks; J. Electrochem. Soc., vol. 142, No. 4, Apr. 1995; pp 1199-1205.

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