Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-05-17
2005-05-17
Abraham, Fetsum (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S325000
Reexamination Certificate
active
06894333
ABSTRACT:
A high density mask-type read only memory (ROM) device and a method of fabricating the high density mask-type read only memory (ROM) device using a salicide process. The method utilizes buried N+ bit lines, thick oxides for forming non-programmable cells, thin gate oxides in regions in which the thick field oxide has been removed to form programmable cells, polysilicon gate structures as word lines, and deposition of a single silicide layer. Since only one silicide layer is deposited, the manufacturing process requires less steps. The resultant ROM device has a silicide layer over the word lines and portions of the buried bit lines that serves to reduce word line and bit line resistance. This results in a ROM device with improved operational speed of the memory cells.
REFERENCES:
patent: 4011105 (1977-03-01), Paivinen et al.
patent: 4104784 (1978-08-01), Klein
patent: 4212684 (1980-07-01), Brower
patent: 5051809 (1991-09-01), Kiyohara
patent: 5633187 (1997-05-01), Hsu
patent: 5712203 (1998-01-01), Hsu
patent: 5854109 (1998-12-01), Sheng et al.
patent: 6372580 (2002-04-01), Shiau
Abraham Fetsum
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Winbond Electronics Corporation
LandOfFree
Oxide layer of variable thickness between word lines and bit... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Oxide layer of variable thickness between word lines and bit..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Oxide layer of variable thickness between word lines and bit... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3395021