Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-06-07
2005-06-07
Cao, Phat X. (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S152000, C438S165000
Reexamination Certificate
active
06902960
ABSTRACT:
An oxide interface and a method for fabricating an oxide interface are provided. The method comprises forming a silicon layer and an oxide layer overlying the silicon layer. The oxide layer is formed at a temperature of less than 400° C. using an inductively coupled plasma source. In some aspects of the method, the oxide layer is more than 20 nanometers (nm) thick and has a refractive index between 1.45 and 1.47. In some aspects of the method, the oxide layer is formed by plasma oxidizing the silicon layer, producing plasma oxide at a rate of up to approximately 4.4 nm per minute (after one minute). In some aspects of the method, a high-density plasma enhanced chemical vapor deposition (HD-PECVD) process is used to form the oxide layer. In some aspects of the method, the silicon and oxide layers are incorporated into a thin film transistor.
REFERENCES:
patent: 5681418 (1997-10-01), Ishimaru
patent: 5792522 (1998-08-01), Jin et al.
patent: 6037278 (2000-03-01), Koyanagi et al.
patent: 6040022 (2000-03-01), Chang et al.
patent: 6057210 (2000-05-01), Yang et al.
patent: 6096661 (2000-08-01), Ngo et al.
patent: 6159559 (2000-12-01), Reber et al.
patent: 6326309 (2001-12-01), Hatanaka et al.
patent: 6551946 (2003-04-01), Chen et al.
patent: 6646287 (2003-11-01), Ono et al.
patent: 6677646 (2004-01-01), Ieong et al.
patent: 6689646 (2004-02-01), Joshi et al.
patent: 2002/0168869 (2002-11-01), Chang et al.
Adachi Masahiro
Hartzell John W.
Joshi Pooran Chandra
Ono Yoshi
Cao Phat X.
Curtin Joseph P.
Doan Theresa T.
Rabdau Matthew D.
Ripma David C.
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