Oxide film removing apparatus and removing method thereof using

Details Oxide film removing apparatus and removing method thereof using Oxide film removing apparatus and removing method thereof using

1991-02-20

1992-05-12

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

134 3, 134 31, 156657, 156345, 252 791, 252 793, 252 794, B44C 122, C03C 1500, C03C 2506

Patent

active

051124378

ABSTRACT:
In oxide film removing equipment for removing a SiO.sub.2 film on a semiconductor substrate by using hydrogen fluoride, a liquid mixture of hydrogen fluoride and methyl alcohol is prepared in a chemical factory beforehand. The liquid mixture of hydrogen fluoride and methyl alcohol is heated to generate azeotropic vapor at a semiconductor works and the vapor is used to remove the SiO.sub.2 film on the substrate. The liquid mixture of hydrogen fluoride and methyl alcohol previously prepared in the chemical factory increases safety during an operation at the semiconductor works.

REFERENCES:
patent: 4749440 (1988-06-01), Blackwood et al.
patent: 4900395 (1990-02-01), Syverson et al.
patent: 4904338 (1990-02-01), Kozicki
patent: 5022961 (1991-06-01), Izumi et al.

Affiliated with

Also associated with

Rating

Oxide film removing apparatus and removing method thereof using does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Oxide film removing apparatus and removing method thereof using , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Oxide film removing apparatus and removing method thereof using will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2425272