Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1997-02-27
2000-03-07
McDonald, Rodney G.
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419216, 20419222, 20419223, 2041923, 216 22, 216 52, C23C 1434
Patent
active
060335327
ABSTRACT:
A method of forming an oxide film over the substrate of an electronic device. In one embodiment, a first metal oxide film layer is deposited on the substrate of the electronic device by bias sputtering. Then, a second metal oxide film layer is deposited by ion beam sputtering on the first metal oxide film layer. In another embodiment, a first metal oxide film layer is deposited on the substrate of the electronic device by ion beam sputtering. Then, a second metal oxide film layer is deposited by bias sputtering on the first metal oxide film layer. In yet another embodiment, a first metal oxide film layer having a first degree of purity is deposited on the substrate of the electronic device. Then, a second metal oxide film layer having a second degree of purity is deposited on the first metal oxide film layer. The first degree of purity is different than the second degree of purity.
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McDonald Rodney G.
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