Oxide etching method

Details Oxide etching method Oxide etching method

1998-10-14

1999-11-30

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

H01L 2100, H01L 213065

Patent

active

059942339

ABSTRACT:
An oxide etching method using low-medium density plasma includes a first etching step to pre-etch the oxide layer with low etching selectivity etchant to pre-form a contact opening and a monitoring opening. The low etching selectivity etchant can also etch the photoresist layer and the photoresist reaction residue. Then, a second etching with high etching selectivity on the oxide is performed to completely form the contact opening with a SAC property and the monitoring opening. The openings expose the substrate.

REFERENCES:
patent: 5227014 (1993-07-01), Crotti et al.
patent: 5595627 (1997-01-01), Inazawa

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