Oxide etch with NH4-NF3 chemistry

Details Oxide etch with NH4-NF3 chemistry Oxide etch with NH4-NF3 chemistry

2011-06-07

2011-06-07

Olsen, Allan (Department: 1716)

Etching a substrate: processes

Planarizing a nonplanar surface

C216S064000, C216S067000, C438S424000, C257SE21546

Reexamination Certificate

active

07955510

ABSTRACT:
The present invention generally provides apparatus and methods for selectively removing various oxides on a semiconductor substrate. One embodiment of the invention provides a method for selectively removing an oxide on a substrate at a desired removal rate using an etching gas mixture. The etching gas mixture comprises a first gas and a second gas, and a ratio of the first gas and a second gas is determined by the desired removal rate.

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Examination Report dated Jun. 28, 2010 for European Patent Application No. 05251143.3.

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