Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1984-09-26
1987-03-31
Wityshyn, Michael
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156653, 156657, 156663, 20419232, 252 791, B44C 122, C03C 1500, C03C 2506
Patent
active
046541128
ABSTRACT:
A new process for plasma etching silicon oxides in integrated circuit structures. A chemistry comprising both oxygen and nitrogen trifluoride is used, with oxygen the dominant component. This provides excellent selectivity to silicon. This etch chemistry also erodes photoresist rapidly, so that it is typically used in combination with a hard-masking process. One particular application of this invention is in a cantilever-etch-mask contact profiling process.
REFERENCES:
patent: 4310380 (1982-01-01), Flamm et al.
patent: 4412119 (1983-10-01), Komatsu et al.
patent: 4522681 (1985-06-01), Gorowitz et al.
patent: 4568410 (1986-02-01), Thornquist
"NF.sub.3 --An Extremely Selective Plasma Etchant . . . ", Air Products, advertisement in Solid State Technology, Feb. 1985.
Donnelly et al., "Anisotropic Etching of SiO.sub.2 in . . . NF.sub.3 /Ar Plasmas", J. Appl. Phys., 55(1), Jan. 1, 1984, pp. 242-252.
Bonifield Thomas D.
Douglas Monte A.
Comfort James T.
Groover III Robert
Hoch Ramon R.
Sharp Melvin
Texas Instruments Incorporated
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