Oxide deposition method

Details Oxide deposition method Oxide deposition method

1986-09-18

1989-03-07

Hearn, Brian F.

Fishing, trapping, and vermin destroying

437235, 437238, 437243, 437244, 148DIG27, 148DIG118, 4272553, C23C 1640, C23C 1646, B05D 512

Patent

active

048106739

ABSTRACT:
Silicon dioxide is deposited by low pressure chemical vapor deposition (LPCVD) from dichlorosilane plus nitrous oxide, using a larger concentration of dichlorosilane than of nitrous oxide.

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patent: 4683486 (1987-07-01), Chatterjee
Mattson, "CVD Films for Interlayer Dielectrics", Solid State Technology, Jan. 23, 1980, pp. 60-64.
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Watanabe et al., "The Properties of LPCVD SiO.sub.2 Film Deposit by SiH.sub.2 Cl.sub.2 and N.sub.2 O Mixtures", J. Electrochem. Soc., vol. 128, No. 12, pp. 2630-2635.
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