Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-14
2006-03-14
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S310000, C257S410000
Reexamination Certificate
active
07012292
ABSTRACT:
A method of preventing oxygen deficiency in a ferroelectric or high ε film material having a top electrode layer deposited thereon. Process conditions are employed that either enable the top electrode layer to be formed without oxygen abstraction from the ferroelectric or high ε film material in the vicinity and at the top surface thereof, or else provide the ferroelectric or high ε film material in the vicinity and at the top surface thereof with a surplus of oxygen. In the latter case, the deposition formation of the top electrode layer on the ferroelectric or high ε film material depletes the over-stoichiometric excess of the oxygen in the film material, to yield a device structure including an electrode on a film material having a proper stoichiometry, e.g., of PbZrTiO3.
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Bilodeau Steven M.
Johnston Stephen T.
Russell Michael W.
Van Buskirk Peter C.
Vestyck Daniel J.
Advanced Technology Materials, Inc
Chappuis Margaret
Hu Shouxiang
Hultquist Steven J.
Intellectual Property / Technology Law
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