Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2005-12-13
2005-12-13
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S238000, C438S381000
Reexamination Certificate
active
06974708
ABSTRACT:
An MTJ (magnetic tunneling junction) MRAM (magnetic random access memory) has a tunneling barrier layer of substantially uniform and homogeneous Al2O3stoichiometry. The barrier layer is formed by depositing Al on a CoFe layer or a CoFe—NiFe bilayer having an oxygen surfactant layer formed thereon, then oxidizing the Al by radical oxidation. The underlying surfactant layer contributes oxygen to the bottom surface of the Al, forming an initial amorphous Al2O3layer. This layer produces small, uniform grains in the remaining Al layer, which promotes a uniform oxidation of the Al between its upper and lower surfaces by the subsequent radical oxidation. A final annealing process to set a pinned layer magnetization enhances the homogeneous oxidation of the layer.
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Horng Cheng T.
Tong Ru-Ying
Ackerman Stephen B.
Applied Spintronics Inc.
Headway Technologies Inc.
Saile George O.
Tsai H. Jey
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