Oxidation-resistant conducting perovskites

Details Oxidation-resistant conducting perovskites Oxidation-resistant conducting perovskites

2006-08-22

2006-08-22

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S213000, C257S288000, C257SE21009, C438S003000

Reexamination Certificate

active

07095067

ABSTRACT:
The present invention provides a semicondctor device that includes a conductor comprised of first and second layers of perovskite that have different stoichiometric compositions. The conductors provide a good template for the formation of dielectric layers thereon and are resistant to oxidizing environments used in semiconductor processing.

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A. Ohtomo, D.A. Muller, J.L. Grazul & H.Y. Hwang; “Artificial Charge-Modulationin Atomic-Scale Perovskite Titanate Superlattices”; Letter to Nature; Nature 419, Sep. 26, 2002; pp. 378-380.

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