Overvoltage self-protection semiconductor device, method of fabr

Details Overvoltage self-protection semiconductor device, method of fabr Overvoltage self-protection semiconductor device, method of fabr

1995-03-01

1997-05-06

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

257127, 257132, 257167, 257168, 257170, H01L 2974

Patent

active

056273878

ABSTRACT:
A novel semiconductor device with a pair of main surfaces is disclosed, in which at least three semiconductor layers are formed adjacently to each other. The device comprises a main thyristor portion for supplying a main current, an auxiliary thyristor portion, a pilot thyristor portion and a breakover portion. The breakover portion, in turn, includes a semiconductor layer having a high impurities concentration formed on one of the main surfaces, and a plurality of semiconductor layers having a high impurities concentration of opposite conduction type formed adjacently to the semiconductor layer and in spaced relationship from each other.

REFERENCES:
patent: 3838330 (1974-09-01), Rosa
patent: 4742382 (1988-05-01), Jaecklin
patent: 4929563 (1990-05-01), Tsunoda et al.
patent: 5003369 (1991-03-01), Kanda et al.
patent: 5187427 (1993-02-01), Erdman

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